IPD65R650CEATMA1 Pricing (USD) [2905pcs Stock]
- 2,500 pcs$0.14383
- Part Number:
- IPD65R650CEATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 10.1A TO252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Zener - Arrays and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPD65R650CEATMA1 electronic components. IPD65R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R650CEATMA1 Product Attributes
Part Number :
IPD65R650CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 10.1A TO252
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 0.21mA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET Feature :
Super Junction
Power Dissipation (Max) :
86W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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