NVD5C688NLT4G Pricing (USD) [354072pcs Stock]
- 1 pcs$0.17139
- 2,500 pcs$0.17054
- Part Number:
- NVD5C688NLT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CHANNEL 60V 17A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVD5C688NLT4G electronic components. NVD5C688NLT4G can be shipped within 24 hours after order. If you have any demands for NVD5C688NLT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVD5C688NLT4G Product Attributes
Part Number :
NVD5C688NLT4G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CHANNEL 60V 17A DPAK
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
27.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.4nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
18W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK (SINGLE GAUGE)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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