Taiwan Semiconductor Corporation - TSM60NB600CF C0G

KEY Part #: K6407055

TSM60NB600CF C0G Pricing (USD) [57375pcs Stock]

  • 1 pcs$0.68150

Part Number:
TSM60NB600CF C0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CH 600V 8A ITO220S.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM60NB600CF C0G electronic components. TSM60NB600CF C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB600CF C0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60NB600CF C0G Product Attributes

Part Number : TSM60NB600CF C0G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CH 600V 8A ITO220S
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 528pF @ 100V
FET Feature : -
Power Dissipation (Max) : 41.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ITO-220S
Package / Case : TO-220-3 Full Pack

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