Toshiba Semiconductor and Storage - 1SS367,H3F

KEY Part #: K6455865

1SS367,H3F Pricing (USD) [2710765pcs Stock]

  • 1 pcs$0.08701
  • 10 pcs$0.08029
  • 25 pcs$0.05774
  • 100 pcs$0.04493
  • 250 pcs$0.02822
  • 500 pcs$0.02406
  • 1,000 pcs$0.01636

Part Number:
1SS367,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE SCHOTTKY 10V 100MA SC76. Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS367,H3F electronic components. 1SS367,H3F can be shipped within 24 hours after order. If you have any demands for 1SS367,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS367,H3F Product Attributes

Part Number : 1SS367,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE SCHOTTKY 10V 100MA SC76
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 10V
Current - Average Rectified (Io) : 100mA
Voltage - Forward (Vf) (Max) @ If : 500mV @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 20µA @ 10V
Capacitance @ Vr, F : 40pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : -
Operating Temperature - Junction : 125°C (Max)

You May Also Be Interested In
  • BAT54E6327HTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT23-3.

  • BAS16E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A

  • DB3X317K0L

    Panasonic Electronic Components

    DIODE SCHOTTKY 30V 1A MINI3.

  • CMDD6001 TR

    Central Semiconductor Corp

    DIODE GEN PURP 75V 250MA SOD323. Diodes - General Purpose, Power, Switching Ultra Low Leakage 71Vr 100Vrrm 250mA

  • VS-5EWH06FNTR-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 5A DPAK. Rectifiers Hyperfast 5A 600V 18ns

  • 1N4150W-E3-08

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns