Vishay Semiconductor Diodes Division - S07M-GS18

KEY Part #: K6455694

S07M-GS18 Pricing (USD) [938215pcs Stock]

  • 1 pcs$0.03942
  • 10,000 pcs$0.03605
  • 30,000 pcs$0.03372
  • 50,000 pcs$0.03101

Part Number:
S07M-GS18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 700MA DO219AB. Rectifiers 0.7 Amp 1000 Volt 1.8uS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - TRIACs, Diodes - RF, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S07M-GS18 electronic components. S07M-GS18 can be shipped within 24 hours after order. If you have any demands for S07M-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S07M-GS18 Product Attributes

Part Number : S07M-GS18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 700MA DO219AB
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 700mA
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Current - Reverse Leakage @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 4pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -55°C ~ 150°C

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