Vishay Semiconductor Diodes Division - US1JHE3_A/I

KEY Part #: K6433168

US1JHE3_A/I Pricing (USD) [725702pcs Stock]

  • 1 pcs$0.05097

Part Number:
US1JHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 600 Volt 1.0A 75ns 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division US1JHE3_A/I electronic components. US1JHE3_A/I can be shipped within 24 hours after order. If you have any demands for US1JHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1JHE3_A/I Product Attributes

Part Number : US1JHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO214AC
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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