IXFP4N85XM Pricing (USD) [37709pcs Stock]
- 1 pcs$1.20311
- 10 pcs$1.03020
- 100 pcs$0.82784
- 500 pcs$0.64387
- 1,000 pcs$0.53350
- Part Number:
- IXFP4N85XM
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 850V 3.5A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Thyristors - TRIACs, Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFP4N85XM electronic components. IXFP4N85XM can be shipped within 24 hours after order. If you have any demands for IXFP4N85XM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP4N85XM Product Attributes
Part Number :
IXFP4N85XM
Manufacturer :
IXYS
Description :
MOSFET N-CH 850V 3.5A TO220
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
850V
Current - Continuous Drain (Id) @ 25°C :
3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
247pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3 Full Pack
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