Infineon Technologies - BSS127H6327XTSA1

KEY Part #: K6406691

[1232pcs Stock]


    Part Number:
    BSS127H6327XTSA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 600V 21MA SOT23.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in Infineon Technologies BSS127H6327XTSA1 electronic components. BSS127H6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS127H6327XTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSS127H6327XTSA1 Product Attributes

    Part Number : BSS127H6327XTSA1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 600V 21MA SOT23
    Series : SIPMOS®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 21mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 500 Ohm @ 16mA, 10V
    Vgs(th) (Max) @ Id : 2.6V @ 8µA
    Gate Charge (Qg) (Max) @ Vgs : 1nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 28pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 500mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-23-3
    Package / Case : TO-236-3, SC-59, SOT-23-3

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