HN1C01FE-GR,LF Pricing (USD) [1436579pcs Stock]
- 1 pcs$0.02588
- 4,000 pcs$0.02575
- 8,000 pcs$0.02317
- 12,000 pcs$0.02060
- 28,000 pcs$0.01931
- 100,000 pcs$0.01716
- Part Number:
- HN1C01FE-GR,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2NPN 50V 0.15A ES6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - RF, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN1C01FE-GR,LF electronic components. HN1C01FE-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1C01FE-GR,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C01FE-GR,LF Product Attributes
Part Number :
HN1C01FE-GR,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN 50V 0.15A ES6
Series :
-
Part Status :
Active
Transistor Type :
2 NPN (Dual)
Current - Collector (Ic) (Max) :
150mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Power - Max :
100mW
Frequency - Transition :
80MHz
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
ES6
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