STB33N65M2 Pricing (USD) [49143pcs Stock]
- 1 pcs$0.79564
- 1,000 pcs$0.70826
- Part Number:
- STB33N65M2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 24A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Diodes - Rectifiers - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STB33N65M2 electronic components. STB33N65M2 can be shipped within 24 hours after order. If you have any demands for STB33N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB33N65M2 Product Attributes
Part Number :
STB33N65M2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 24A D2PAK
Series :
MDmesh™ M2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
140 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41.5nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1790pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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