STMicroelectronics - STB200NF04-1

KEY Part #: K6415867

[8325pcs Stock]


    Part Number:
    STB200NF04-1
    Manufacturer:
    STMicroelectronics
    Detailed description:
    MOSFET N-CH 40V 120A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Special Purpose, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in STMicroelectronics STB200NF04-1 electronic components. STB200NF04-1 can be shipped within 24 hours after order. If you have any demands for STB200NF04-1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STB200NF04-1 Product Attributes

    Part Number : STB200NF04-1
    Manufacturer : STMicroelectronics
    Description : MOSFET N-CH 40V 120A I2PAK
    Series : STripFET™ II
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 90A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 210nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 310W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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