JANTX1N5811US Pricing (USD) [7541pcs Stock]
- 1 pcs$6.93221
- 10 pcs$6.30201
- 25 pcs$5.82940
- 100 pcs$5.35671
- 250 pcs$4.88407
- Part Number:
- JANTX1N5811US
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 150V 3A B-MELF. ESD Suppressors / TVS Diodes D MET 6A SFST 150V HR SM
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JANTX1N5811US electronic components. JANTX1N5811US can be shipped within 24 hours after order. If you have any demands for JANTX1N5811US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTX1N5811US Product Attributes
Part Number :
JANTX1N5811US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 150V 3A B-MELF
Series :
Military, MIL-PRF-19500/477
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
150V
Current - Average Rectified (Io) :
3A
Voltage - Forward (Vf) (Max) @ If :
875mV @ 4A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Current - Reverse Leakage @ Vr :
5µA @ 150V
Capacitance @ Vr, F :
60pF @ 10V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
SQ-MELF, B
Supplier Device Package :
B, SQ-MELF
Operating Temperature - Junction :
-65°C ~ 175°C
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