RQ3C150BCTB Pricing (USD) [223713pcs Stock]
- 1 pcs$0.18278
- 3,000 pcs$0.18187
- Part Number:
- RQ3C150BCTB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET P-CHANNEL 20V 30A 8HSMT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RQ3C150BCTB electronic components. RQ3C150BCTB can be shipped within 24 hours after order. If you have any demands for RQ3C150BCTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3C150BCTB Product Attributes
Part Number :
RQ3C150BCTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET P-CHANNEL 20V 30A 8HSMT
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
6.7 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
20W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-HSMT (3.2x3)
Package / Case :
8-PowerVDFN
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