Part Number :
SSM6L09FUTE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N/P-CH 30V 0.4A/0.2A US6
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
400mA, 200mA
Rds On (Max) @ Id, Vgs :
700 mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id :
1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
20pF @ 5V
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Supplier Device Package :
US6