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Comchip Technology - CDBDSC5650-G

KEY Part #: K6441678

CDBDSC5650-G Pricing (USD) [41564pcs Stock]

  • 1 pcs$0.94072
Part Number:
CDBDSC5650-G
Manufacturer:
Comchip Technology
Detailed description:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Comchip Technology CDBDSC5650-G electronic components. CDBDSC5650-G can be shipped within 24 hours after order. If you have any demands for CDBDSC5650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBDSC5650-G Product Attributes

Part Number : CDBDSC5650-G
Manufacturer : Comchip Technology
Description : DIODE SILICON CARBIDE POWER SCHO
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 21.5A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 5A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 100µA @ 650V
Capacitance @ Vr, F : 424pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : D-PAK (TO-252)
Operating Temperature - Junction : -55°C ~ 175°C

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