FDMS4D0N12C Pricing (USD) [29645pcs Stock]
- 1 pcs$1.39026
- Part Number:
- FDMS4D0N12C
- Manufacturer:
- ON Semiconductor
- Detailed description:
- PTNG 120V N-FET PQFN56.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Special Purpose, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMS4D0N12C electronic components. FDMS4D0N12C can be shipped within 24 hours after order. If you have any demands for FDMS4D0N12C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS4D0N12C Product Attributes
Part Number :
FDMS4D0N12C
Manufacturer :
ON Semiconductor
Description :
PTNG 120V N-FET PQFN56
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
120V
Current - Continuous Drain (Id) @ 25°C :
18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id :
4V @ 370A
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6460pF @ 60V
FET Feature :
-
Power Dissipation (Max) :
2.7W (Ta), 106W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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