Vishay Semiconductor Diodes Division - 1N4007GPE-E3/53

KEY Part #: K6457374

1N4007GPE-E3/53 Pricing (USD) [474173pcs Stock]

  • 1 pcs$0.07800
  • 9,000 pcs$0.07069

Part Number:
1N4007GPE-E3/53
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 1A DO204AL. Rectifiers 1.0A 1000V Glass Passivated TrimLeads
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Diodes - Bridge Rectifiers and Diodes - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N4007GPE-E3/53 electronic components. 1N4007GPE-E3/53 can be shipped within 24 hours after order. If you have any demands for 1N4007GPE-E3/53, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4007GPE-E3/53 Product Attributes

Part Number : 1N4007GPE-E3/53
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 1A DO204AL
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Current - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AL, DO-41, Axial
Supplier Device Package : DO-204AL (DO-41)
Operating Temperature - Junction : -65°C ~ 175°C

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