DMG2302UKQ-13 Pricing (USD) [483464pcs Stock]
- 1 pcs$0.07651
- Part Number:
- DMG2302UKQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 8V-24V SOT23 TR 1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG2302UKQ-13 electronic components. DMG2302UKQ-13 can be shipped within 24 hours after order. If you have any demands for DMG2302UKQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG2302UKQ-13 Product Attributes
Part Number :
DMG2302UKQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 8V-24V SOT23 TR 1
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.8nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
130pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
660mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23
Package / Case :
TO-236-3, SC-59, SOT-23-3
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