IXYS - MMIX1F230N20T

KEY Part #: K6395809

MMIX1F230N20T Pricing (USD) [2882pcs Stock]

  • 1 pcs$16.61017
  • 20 pcs$16.52753

Part Number:
MMIX1F230N20T
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 200V 168A SMPD.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in IXYS MMIX1F230N20T electronic components. MMIX1F230N20T can be shipped within 24 hours after order. If you have any demands for MMIX1F230N20T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1F230N20T Product Attributes

Part Number : MMIX1F230N20T
Manufacturer : IXYS
Description : MOSFET N-CH 200V 168A SMPD
Series : GigaMOS™, HiperFET™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 168A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.3 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 378nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 28000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 24-SMPD
Package / Case : 24-PowerSMD, 21 Leads