Taiwan Semiconductor Corporation - 1N4448W RHG

KEY Part #: K6438867

1N4448W RHG Pricing (USD) [3121543pcs Stock]

  • 1 pcs$0.01185

Part Number:
1N4448W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE GEN PURP 75V 150MA SOD123F. Diodes - General Purpose, Power, Switching Switching diode 400mW
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation 1N4448W RHG electronic components. 1N4448W RHG can be shipped within 24 hours after order. If you have any demands for 1N4448W RHG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448W RHG Product Attributes

Part Number : 1N4448W RHG
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 75V 150MA SOD123F
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 150mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 5µA @ 75V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SOD-123F
Supplier Device Package : SOD-123F
Operating Temperature - Junction : -65°C ~ 150°C

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