IRF200P223 Pricing (USD) [8674pcs Stock]
- 1 pcs$4.75075
- 400 pcs$3.10154
- Part Number:
- IRF200P223
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 100A TO247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF200P223 electronic components. IRF200P223 can be shipped within 24 hours after order. If you have any demands for IRF200P223, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200P223 Product Attributes
Part Number :
IRF200P223
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 100A TO247AC
Series :
StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
11.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
102nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5094pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
313W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Package / Case :
TO-247-3
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