RFD3055LE Pricing (USD) [105080pcs Stock]
- 1 pcs$0.40556
- 10 pcs$0.33459
- 100 pcs$0.25806
- 500 pcs$0.19116
- 1,000 pcs$0.15293
- Part Number:
- RFD3055LE
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 11A I-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor RFD3055LE electronic components. RFD3055LE can be shipped within 24 hours after order. If you have any demands for RFD3055LE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFD3055LE Product Attributes
Part Number :
RFD3055LE
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 11A I-PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
107 mOhm @ 8A, 5V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
38W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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