[3078pcs Stock]
- Part Number:
- JANTX1N3170R
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 600V 300A DO9.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JANTX1N3170R electronic components. JANTX1N3170R can be shipped within 24 hours after order. If you have any demands for JANTX1N3170R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTX1N3170R Product Attributes
Part Number :
JANTX1N3170R
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 600V 300A DO9
Series :
Military, MIL-PRF-19500/586
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
300A
Voltage - Forward (Vf) (Max) @ If :
1.55V @ 940A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Chassis, Stud Mount
Package / Case :
DO-205AB, DO-9, Stud
Supplier Device Package :
DO-205AB, DO-9
Operating Temperature - Junction :
-65°C ~ 175°C
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