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  5. FCI25N60N-F102

ON Semiconductor - FCI25N60N-F102

KEY Part #: K6417114

FCI25N60N-F102 Pricing (USD) [25094pcs Stock]

  • 1 pcs$1.64240
Part Number:
FCI25N60N-F102
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V 25A I2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Power Driver Modules, Diodes - Zener - Single, Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FCI25N60N-F102 electronic components. FCI25N60N-F102 can be shipped within 24 hours after order. If you have any demands for FCI25N60N-F102, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCI25N60N-F102 Product Attributes

Part Number : FCI25N60N-F102
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V 25A I2PAK
Series : SupreMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3352pF @ 100V
FET Feature : -
Power Dissipation (Max) : 216W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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