1N6483-E3/97 Pricing (USD) [1025340pcs Stock]
- 1 pcs$0.03807
- 10,000 pcs$0.03788
- Part Number:
- 1N6483-E3/97
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division 1N6483-E3/97 electronic components. 1N6483-E3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483-E3/97 Product Attributes
Part Number :
1N6483-E3/97
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 800V 1A DO213AB
Series :
SUPERECTIFIER®
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
800V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 1A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
8pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-213AB, MELF (Glass)
Supplier Device Package :
DO-213AB
Operating Temperature - Junction :
-65°C ~ 175°C
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