Nexperia USA Inc. - PSMN3R4-30BL,118

KEY Part #: K6420082

PSMN3R4-30BL,118 Pricing (USD) [158072pcs Stock]

  • 1 pcs$0.23399
  • 800 pcs$0.23088

Part Number:
PSMN3R4-30BL,118
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 30V 100A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Thyristors - SCRs - Modules, Power Driver Modules, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN3R4-30BL,118 electronic components. PSMN3R4-30BL,118 can be shipped within 24 hours after order. If you have any demands for PSMN3R4-30BL,118, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN3R4-30BL,118 Product Attributes

Part Number : PSMN3R4-30BL,118
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 30V 100A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3907pF @ 15V
FET Feature : -
Power Dissipation (Max) : 114W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB