FDV302P Pricing (USD) [1303251pcs Stock]
- 1 pcs$0.02838
- 3,000 pcs$0.02762
- Part Number:
- FDV302P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 25V 120MA SOT-23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDV302P electronic components. FDV302P can be shipped within 24 hours after order. If you have any demands for FDV302P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDV302P Product Attributes
Part Number :
FDV302P
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 25V 120MA SOT-23
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.7V, 4.5V
Rds On (Max) @ Id, Vgs :
10 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.31nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
11pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
350mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23
Package / Case :
TO-236-3, SC-59, SOT-23-3
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