Part Number :
BSM180D12P3C007
Manufacturer :
Rohm Semiconductor
Description :
SIC POWER MODULE
FET Type :
2 N-Channel (Dual)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 10V
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Module