Infineon Technologies - IPB80P03P4L07ATMA1

KEY Part #: K6419626

IPB80P03P4L07ATMA1 Pricing (USD) [122022pcs Stock]

  • 1 pcs$0.30312
  • 1,000 pcs$0.27813

Part Number:
IPB80P03P4L07ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET P-CH 30V 80A TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Infineon Technologies IPB80P03P4L07ATMA1 electronic components. IPB80P03P4L07ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80P03P4L07ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80P03P4L07ATMA1 Product Attributes

Part Number : IPB80P03P4L07ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH 30V 80A TO263-3
Series : OptiMOS™
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 5700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 88W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-3-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

You May Also Be Interested In