ON Semiconductor - FQI27N25TU

KEY Part #: K6418314

FQI27N25TU Pricing (USD) [59424pcs Stock]

  • 1 pcs$0.65800
  • 1,000 pcs$0.48808

Part Number:
FQI27N25TU
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 250V 25.5A I2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - Special Purpose and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in ON Semiconductor FQI27N25TU electronic components. FQI27N25TU can be shipped within 24 hours after order. If you have any demands for FQI27N25TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQI27N25TU Product Attributes

Part Number : FQI27N25TU
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 250V 25.5A I2PAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.13W (Ta), 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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