Description :
IC MOSFET DRVR 9A LOSIDE TO263-5
Driven Configuration :
Low-Side
Gate Type :
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply :
4.5V ~ 35V
Logic Voltage - VIL, VIH :
0.8V, 3.5V
Current - Peak Output (Source, Sink) :
9A, 9A
High Side Voltage - Max (Bootstrap) :
-
Rise / Fall Time (Typ) :
10ns, 10ns
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Supplier Device Package :
TO-263 (D²Pak)