Part Number :
IPB35N10S3L26ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH TO263-3
Series :
Automotive, AEC-Q101, OptiMOS™
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
26.3 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Power Dissipation (Max) :
71W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB