TPW1R306PL,L1Q Pricing (USD) [66799pcs Stock]
- 1 pcs$0.59163
- 5,000 pcs$0.58868
- Part Number:
- TPW1R306PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Diodes - RF, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW1R306PL,L1Q Product Attributes
Part Number :
TPW1R306PL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Series :
U-MOSIX-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
960mW (Ta), 170W (Tc)
Operating Temperature :
175°C
Mounting Type :
Surface Mount
Supplier Device Package :
8-DSOP Advance
Package / Case :
8-PowerVDFN
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