Vishay Semiconductor Diodes Division - VS-10ETS08S-M3

KEY Part #: K6434428

VS-10ETS08S-M3 Pricing (USD) [108441pcs Stock]

  • 1 pcs$0.34108
  • 1,000 pcs$0.31052

Part Number:
VS-10ETS08S-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 800V 10A D2PAK. Rectifiers New Input Diodes - D2PAK-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-10ETS08S-M3 electronic components. VS-10ETS08S-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETS08S-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETS08S-M3 Product Attributes

Part Number : VS-10ETS08S-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 800V 10A D2PAK
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 800V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 10A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 50µA @ 800V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : D2PAK
Operating Temperature - Junction : -40°C ~ 150°C

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