Vishay Semiconductor Diodes Division - VS-10ETF12-M3

KEY Part #: K6440814

VS-10ETF12-M3 Pricing (USD) [23205pcs Stock]

  • 1 pcs$1.71873
  • 10 pcs$1.54201
  • 25 pcs$1.45766
  • 100 pcs$1.26335
  • 250 pcs$1.19856
  • 500 pcs$1.02032
  • 1,000 pcs$0.86051
  • 2,500 pcs$0.81953

Part Number:
VS-10ETF12-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1.2KV 10A TO220AC. Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF12-M3 electronic components. VS-10ETF12-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF12-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF12-M3 Product Attributes

Part Number : VS-10ETF12-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1.2KV 10A TO220AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.33V @ 10A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 310ns
Current - Reverse Leakage @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -40°C ~ 150°C

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