US1GHE3_A/H Pricing (USD) [636328pcs Stock]
- 1 pcs$0.05813
- 1,800 pcs$0.05412
- 3,600 pcs$0.04961
- 5,400 pcs$0.04660
- 12,600 pcs$0.04360
- 45,000 pcs$0.04009
- Part Number:
- US1GHE3_A/H
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 400V 1A DO214AC. Rectifiers 400 Volt 1.0A 50ns 30 Amp IFSM
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division US1GHE3_A/H electronic components. US1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1GHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1GHE3_A/H Product Attributes
Part Number :
US1GHE3_A/H
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 400V 1A DO214AC
Series :
Automotive, AEC-Q101
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
400V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
10µA @ 400V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214AC, SMA
Supplier Device Package :
DO-214AC (SMA)
Operating Temperature - Junction :
-55°C ~ 150°C
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