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Global Power Technologies Group - GPA030A135MN-FDR

KEY Part #: K6424849

GPA030A135MN-FDR Pricing (USD) [39064pcs Stock]

  • 1 pcs$1.00594
  • 2,500 pcs$1.00093
Part Number:
GPA030A135MN-FDR
Manufacturer:
Global Power Technologies Group
Detailed description:
IGBT 1350V 60A 329W TO3PN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Global Power Technologies Group GPA030A135MN-FDR electronic components. GPA030A135MN-FDR can be shipped within 24 hours after order. If you have any demands for GPA030A135MN-FDR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPA030A135MN-FDR Product Attributes

Part Number : GPA030A135MN-FDR
Manufacturer : Global Power Technologies Group
Description : IGBT 1350V 60A 329W TO3PN
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1350V
Current - Collector (Ic) (Max) : 60A
Current - Collector Pulsed (Icm) : 90A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 30A
Power - Max : 329W
Switching Energy : 4.4mJ (on), 1.18mJ (off)
Input Type : Standard
Gate Charge : 300nC
Td (on/off) @ 25°C : 30ns/145ns
Test Condition : 600V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 450ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3
Supplier Device Package : TO-3PN

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