CSD16323Q3 Pricing (USD) [208752pcs Stock]
- 1 pcs$0.18252
- 2,500 pcs$0.18161
- Part Number:
- CSD16323Q3
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 25V 3.3X3.3 8-SON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD16323Q3 electronic components. CSD16323Q3 can be shipped within 24 hours after order. If you have any demands for CSD16323Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD16323Q3 Product Attributes
Part Number :
CSD16323Q3
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 25V 3.3X3.3 8-SON
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
3V, 8V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 24A, 8V
Vgs(th) (Max) @ Id :
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Vgs (Max) :
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 12.5V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSON-CLIP (3.3x3.3)
Package / Case :
8-PowerTDFN
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