IPW65R070C6FKSA1 Pricing (USD) [8485pcs Stock]
- 1 pcs$4.85651
- Part Number:
- IPW65R070C6FKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 53.5A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPW65R070C6FKSA1 electronic components. IPW65R070C6FKSA1 can be shipped within 24 hours after order. If you have any demands for IPW65R070C6FKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW65R070C6FKSA1 Product Attributes
Part Number :
IPW65R070C6FKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 53.5A TO247
Series :
CoolMOS™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
53.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
391W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO247-3
Package / Case :
TO-247-3
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