[4163pcs Stock]
- Part Number:
- IRL6372PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 30V 8.1A 8SO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRL6372PBF electronic components. IRL6372PBF can be shipped within 24 hours after order. If you have any demands for IRL6372PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6372PBF Product Attributes
Part Number :
IRL6372PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 30V 8.1A 8SO
Series :
HEXFET®
Part Status :
Discontinued at Digi-Key
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.1A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1020pF @ 25V
Power - Max :
2W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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