Vishay Semiconductor Diodes Division - BYG10DHE3_A/I

KEY Part #: K6439814

BYG10DHE3_A/I Pricing (USD) [618118pcs Stock]

  • 1 pcs$0.05984
  • 7,500 pcs$0.05471

Part Number:
BYG10DHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 200V 1.5A DO214. Rectifiers 1.5A,200V,STD,AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - IGBTs - Single and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG10DHE3_A/I electronic components. BYG10DHE3_A/I can be shipped within 24 hours after order. If you have any demands for BYG10DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10DHE3_A/I Product Attributes

Part Number : BYG10DHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 200V 1.5A DO214
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4µs
Current - Reverse Leakage @ Vr : 1µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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