[3906pcs Stock]
- Part Number:
- TPC8212-H(TE12LQ,M
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET 2N-CH 30V 6A SOP8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - RF and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPC8212-H(TE12LQ,M electronic components. TPC8212-H(TE12LQ,M can be shipped within 24 hours after order. If you have any demands for TPC8212-H(TE12LQ,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8212-H(TE12LQ,M Product Attributes
Part Number :
TPC8212-H(TE12LQ,M
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 30V 6A SOP8
Series :
-
Part Status :
Obsolete
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6A
Rds On (Max) @ Id, Vgs :
21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
840pF @ 10V
Power - Max :
450mW
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package :
8-SOP (5.5x6.0)
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