GeneSiC Semiconductor - GB100XCP12-227

KEY Part #: K6532798

GB100XCP12-227 Pricing (USD) [417pcs Stock]

  • 1 pcs$110.09500
  • 10 pcs$104.78142

Part Number:
GB100XCP12-227
Manufacturer:
GeneSiC Semiconductor
Detailed description:
IGBT 1200V 100A SOT-227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Thyristors - SCRs, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Power Driver Modules ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor GB100XCP12-227 electronic components. GB100XCP12-227 can be shipped within 24 hours after order. If you have any demands for GB100XCP12-227, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB100XCP12-227 Product Attributes

Part Number : GB100XCP12-227
Manufacturer : GeneSiC Semiconductor
Description : IGBT 1200V 100A SOT-227
Series : -
Part Status : Obsolete
IGBT Type : PT
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 100A
Power - Max : -
Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 100A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 8.55nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SOT-227-4
Supplier Device Package : SOT-227
You May Also Be Interested In
  • VS-GB90SA120U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • VS-GB90DA60U

    Vishay Semiconductor Diodes Division

    TRANSISTOR INSLTED GATE BIPOLAR.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • VS-GB75NA60UF

    Vishay Semiconductor Diodes Division

    IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT