STW58N65DM2AG Pricing (USD) [7905pcs Stock]
- 1 pcs$5.21348
- 10 pcs$4.69037
- 100 pcs$3.85635
- 500 pcs$3.23099
- Part Number:
- STW58N65DM2AG
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 48A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Rectifiers - Single, Thyristors - TRIACs and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW58N65DM2AG electronic components. STW58N65DM2AG can be shipped within 24 hours after order. If you have any demands for STW58N65DM2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW58N65DM2AG Product Attributes
Part Number :
STW58N65DM2AG
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 48A
Series :
Automotive, AEC-Q101, MDmesh™ DM2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
360W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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