Vishay Siliconix - SQM50P03-07_GE3

KEY Part #: K6396327

SQM50P03-07_GE3 Pricing (USD) [69584pcs Stock]

  • 1 pcs$0.99090
  • 10 pcs$0.89641
  • 100 pcs$0.72022
  • 500 pcs$0.56017
  • 1,000 pcs$0.46414

Part Number:
SQM50P03-07_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CHANNEL 30V 50A TO263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix SQM50P03-07_GE3 electronic components. SQM50P03-07_GE3 can be shipped within 24 hours after order. If you have any demands for SQM50P03-07_GE3, Please submit a Request for Quotation here or send us an email:
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ISO-28000-2007
ISO-45001-2018

SQM50P03-07_GE3 Product Attributes

Part Number : SQM50P03-07_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CHANNEL 30V 50A TO263
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5380pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TA)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D²Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB