Vishay Semiconductor Diodes Division - UH3BHE3_A/I

KEY Part #: K6457096

UH3BHE3_A/I Pricing (USD) [347921pcs Stock]

  • 1 pcs$0.10631
  • 3,500 pcs$0.09634

Part Number:
UH3BHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 3A, 100V, 25NS, PLANNAR FER RECT SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Special Purpose, Thyristors - SCRs and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division UH3BHE3_A/I electronic components. UH3BHE3_A/I can be shipped within 24 hours after order. If you have any demands for UH3BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH3BHE3_A/I Product Attributes

Part Number : UH3BHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 3A DO214AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.05V @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 40ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 175°C

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