IXYS - IXFX12N90Q

KEY Part #: K6408940

IXFX12N90Q Pricing (USD) [6693pcs Stock]

  • 1 pcs$6.77356

Part Number:
IXFX12N90Q
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 900V 12A PLUS247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in IXYS IXFX12N90Q electronic components. IXFX12N90Q can be shipped within 24 hours after order. If you have any demands for IXFX12N90Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX12N90Q Product Attributes

Part Number : IXFX12N90Q
Manufacturer : IXYS
Description : MOSFET N-CH 900V 12A PLUS247
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™-3
Package / Case : TO-247-3