SQM100P10-19L_GE3 Pricing (USD) [50012pcs Stock]
- 1 pcs$0.78183
- Part Number:
- SQM100P10-19L_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 100V 93A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Thyristors - SCRs and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQM100P10-19L_GE3 electronic components. SQM100P10-19L_GE3 can be shipped within 24 hours after order. If you have any demands for SQM100P10-19L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM100P10-19L_GE3 Product Attributes
Part Number :
SQM100P10-19L_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 100V 93A TO263
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
19 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
350nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (D²Pak)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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