DMG6601LVT-7 Pricing (USD) [953326pcs Stock]
- 1 pcs$0.03880
- 3,000 pcs$0.03524
- Part Number:
- DMG6601LVT-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N/P-CH 30V 26TSOT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG6601LVT-7 electronic components. DMG6601LVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6601LVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6601LVT-7 Product Attributes
Part Number :
DMG6601LVT-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N/P-CH 30V 26TSOT
Series :
-
Part Status :
Active
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.8A, 2.5A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
422pF @ 15V
Power - Max :
850mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
TSOT-26
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