SIS434DN-T1-GE3 Pricing (USD) [203660pcs Stock]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Part Number:
- SIS434DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 40V 35A PPAK 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIS434DN-T1-GE3 electronic components. SIS434DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS434DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS434DN-T1-GE3 Product Attributes
Part Number :
SIS434DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 40V 35A PPAK 1212-8
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.6 mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1530pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 52W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8
Package / Case :
PowerPAK® 1212-8
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